Imprint Effect

The "Imprint Effect" is a phenomenon in ferroelectric materials characterized by a shift in the hysteresis loop along the electric field axis, resulting from asymmetric internal bias fields that arise due to defects, domain wall pinning, or interfacial effects, thereby distinguishing it from symmetric polarization switching behavior in ideal ferroelectric systems.

305

Publications

14.8K

Citations

1.7K

Authors

628

Institutions

Publications per year

2017–2026

93

Variants

Ferroelectric Imprint

Authors

1.7K

  1. VN
    V. N. Goncharov

    University of Rochester, United States

    8 publications · 327 citations

    8

    h-index

  2. PB
    P. B. Radha

    University of Rochester, United States

    6 publications · 179 citations

    6

    h-index

  3. SP
    S. P. Regan

    University of Rochester, United States

    6 publications · 142 citations

    6

    h-index

  4. RW
    Rainer Waser

    Forschungszentrum Jülich, Germany

    6 publications · 331 citations

    6

    h-index

  5. SX
    S. X. Hu

    University of Rochester, United States

    6 publications · 224 citations

    6

    h-index

1–5 of 1.7K

Venues

  1. Applied Physics Letters

    27 publications · 1.3K citations

    18

    h-index

  2. Physics of Plasmas

    14 publications · 553 citations

    13

    h-index

  3. Journal of Applied Physics

    14 publications · 782 citations

    12

    h-index

  4. Integrated ferroelectrics

    10 publications · 201 citations

    10

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 8 publications · 354 citations

    8

    h-index

1–5