Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2000 · 972 citations

Engineering, Materials Engineering, Materials Science +17

Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

M.-H. Cho, Youngchae Roh, C. N. Whang et al. · Applied Physics Letters · 2002 · 338 citations

Engineering, Materials Engineering, Materials Science +17

Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

H.Y. Yu, Meng Li, B. J. Cho et al. · Applied Physics Letters · 2002 · 316 citations

Natural Sciences, Materials Science, Physics +16

Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

G. B. Alers, D. J. Werder, Yves J. Chabal et al. · Applied Physics Letters · 1998 · 265 citations

Engineering, Materials Engineering, Materials Science +17

HfO 2 / SiO 2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault, D. Samour, J.-F. Damlencourt et al. · Applied Physics Letters · 2002 · 202 citations

Natural Sciences, Chemistry, Materials Science +17