Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition - Concepedia

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Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

46

Citations

11

References

2003

Year

J.-F. Damlencourt, O. Renault, D. Samour, Anne‐Marie Papon, C. Leroux, F. Martín, S. Marthon, M.N. Séméria, X. Garros

Solid-State Electronics

Materials SciencePhysico-chemical CharacterizationEngineeringNanoelectronicsOxide ElectronicsSurface ScienceApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsChemical Vapor DepositionAtomic Layer DepositionSemiconductor Device

References

	Year	Citations

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