S. Marthon

HfO 2 / SiO 2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault, D. Samour, J.-F. Damlencourt et al. · Applied Physics Letters · 2002 · 202 citations

Natural Sciences, Chemistry, Materials Science +17

Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si

O. Renault, D. Samour, D. Rouchon et al. · Thin Solid Films · 2003 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

J.-F. Damlencourt, O. Renault, D. Samour et al. · Solid-State Electronics · 2003 · 46 citations

Engineering, Materials Engineering, Materials Science +16

Nitridation of Si (100) made by radio frequency plasma as studied by <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> angular resolved x-ray photoelectron spectroscopy

A. Ermolieff, Pascal Bernard, S. Marthon et al. · Journal of Applied Physics · 1986 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Nitridation of polycrystalline titanium as studied by <i>in situ</i> angle‐resolved x‐ray photoelectron spectroscopy

A. Ermolieff, Pascal Bernard, S. Marthon et al. · Surface and Interface Analysis · 1988 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +14