SOL-GEL FABRICATION OF PZT THICK FILMS FOR MEMS

S. Corkovic, R. W. Whatmore, Qi Zhang

Integrated ferroelectrics · 2007 · 12 citations · 15 references

Concepts

Abstract

ABSTRACT Pb(ZrxTi1 – x)O3 (PZT) sol (≥ 0.6M) was spun onto platinised silicon substrate. The single layer thickness of a dense, crack-free film up to 500 nm could be obtained. It was found that the key factor in obtaining thick crack-free films was to choose an appropriate heating profile, using a method based on the wafer deflection measurement. By using the temperature profile to thermally treat each single layer, it was possible to obtain thick crack-free films by repeatedly spin-coating. The dielectric and piezoelectric properties of the films with different thicknesses and orientations were measured and compared.

References

15