Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 330 citations

Engineering, Materials Engineering, Materials Science +17

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

H. Marchand, Lingyan Zhao, N. Zhang et al. · Journal of Applied Physics · 2001 · 181 citations

Engineering, Materials Engineering, Materials Science +17

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 139 citations

Engineering, Materials Engineering, Materials Science +12

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

H. Marchand, N. Zhang, Lingyan Zhao et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 119 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

Yoshio Honda, Yosuke Kuroiwa, M. Yamaguchi et al. · Applied Physics Letters · 2002 · 115 citations · Full text

Engineering, Materials Engineering, Materials Science +17