Journal of Applied Physics · 1987 · 65 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionDopingIon ImplantationSemiconductor DefectsSemiconductor Device MaterialsSilicon MaterialsAnnealingImplantation Through Thin FilmsIon Implantation EffectsPhotoluminescencePhotoluminescence SpectroscopySemiconductor CharacterizationSilicon CarbideSilicon Carbide (Sic) Materials
Low-temperature photoluminescence (PL) spectroscopy has been used to characterize as-grown and ion-implanted 3C-SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion-implanted Lely-grown SiC were also observed in the as-grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as-grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely-grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted-ion species.
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Electron cyclotron resonance in cubic SiC
R. Kaplan, R. J. Wagner, H.J. Kim et al. · Solid State Communications · 1985 · 117 citations