J. Ryu

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

R. F. Davis, Zlatko Sitar, B. Williams et al. · Materials Science and Engineering B · 1988 · 236 citations

Engineering, Materials Science, Physics +17

Beyond 3G: vision, requirements, and enabling technologies

Yungsoo Kim, Byung Jang Jeong, Jaehak Chung et al. · IEEE Communications Magazine · 2003 · 151 citations

Engineering, Communication, Electrical Engineering +17

Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition

Jaime A. Freitas, S. G. Bishop, J. A. Edmond et al. · Journal of Applied Physics · 1987 · 65 citations

Engineering, Materials Engineering, Materials Science +17

Electrical Contacts to Beta Silicon Carbide Thin Films

J. A. Edmond, J. Ryu, Jeffrey T. Glass et al. · Journal of The Electrochemical Society · 1988 · 64 citations

Natural Sciences, Materials Science, Physics +17

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

Hong Jin Kong, H. J. Kim, J. A. Edmond et al. · MRS Proceedings · 1987 · 16 citations

Engineering, Materials Engineering, Materials Science +14