Japanese Journal of Applied Physics · 2001 · 12 citations · 14 references
EngineeringElectron-beam LithographyMicroscopyOxide DotsChemical EngineeringBeam LithographyAtomic Force MicroscopeNanolithographyNanometrologyNanoscale ScienceNanolithography MethodMaterials ScienceNanotechnologyMicroelectronicsNanolithography UsingMicrofabricationNanomaterialsApplied PhysicsScanning Force MicroscopyAspect RatioNanofabrication
An atomic force microscope (AFM)-based surface nanooxidation method was used to fabricate nanoscale p-GaAs oxide. We were able to realize an increase in the aspect ratio by a factor of 2 for oxide dots using a voltage modulation technique. The aspect ratios of oxide dots reached the maximum at a frequency of about 1000 Hz. Moreover, from a duty ratio dependence of aspect ratios of oxide dots, it was considered that optimization of an anodizing time per cycle of a pulsed voltage was necessary. The oxide could be etched by water. By adjusting both oxidation and etching process conditions, a groove with a 40 nm width and 6 nm depth was successfully fabricated. From these results, it was clear that the aspect ratio of p-GaAs oxide could be improved using a pulsed voltage, and optimization of process conditions, particularly the frequency and duty ratio of a pulsed voltage, was necessary to obtain p-GaAs oxide with a high aspect ratio.
14
Fabrication of Si nanostructures with an atomic force microscope
E. S. Snow, P. M. Campbell · Applied Physics Letters · 1994 · 366 citations
Engineering, Afm Tip, Microscopy +20
Understanding scanned probe oxidation of silicon
John A. Dagata, Takahito Inoue, J. Itoh et al. · Applied Physics Letters · 1998 · 107 citations
Engineering, Microscopy, Chemistry +17