Concepedia

Aspect Ratio Dependent Etching

Aspect Ratio Dependent Etching is a plasma etching phenomenon in semiconductor manufacturing where the etch rate decreases with increasing aspect ratio of the feature being etched, primarily due to restricted reactant transport and ion flux in high-aspect-ratio structures.

242

Publications

10.3K

Citations

843

Authors

220

Institutions

Publications per year

2017–2026

35

Variants

Arde

Parents

Publications

242

Microscopic uniformity in plasma etching

Richard A. Gottscho, C. W. Jurgensen, D. J. Vitkavage · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 615 citations

, , +17

Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher

Arturo A. Ayón, Rebecca A. Braff, C. C. Lin et al. · Journal of The Electrochemical Society · 1999 · 411 citations

, , +13

Subwavelength waveguide grating for mode conversion and light coupling in integrated optics

Pavel Cheben, D-X. Xu, S. Janz et al. · Optics Express · 2006 · 278 citations · Full text

, , +17

Vertical Etching of Silicon at very High Aspect Ratios

Don L. Kendall · Annual Review of Materials Science · 1979 · 220 citations

, , +14

Pulsed plasma etching for semiconductor manufacturing

Demetre J. Economou · Journal of Physics D Applied Physics · 2014 · 212 citations

, , +17

1–5 of 242

Authors

843

  1. MJ
    Mark J. Kushner

    University of Illinois Urbana-Champaign, United States

    10 publications · 589 citations

    10

    h-index

  2. DJ
    Demetre J. Economou

    University of Houston, United States

    5 publications · 424 citations

    5

    h-index

  3. OJ
    O. Joubert

    Centre National de la Recherche Scientifique, France

    5 publications · 221 citations

    5

    h-index

  4. CM
    Chad M. Huard

    University of Michigan, United States

    5 publications · 369 citations

    5

    h-index

  5. GS
    G. S. Oehrlein

    University of Maryland, College Park, United States

    5 publications · 237 citations

    5

    h-index

1–5 of 843

Institutions

220

  1. University of Michigan

    Ann Arbor, United States

    12 h-index

    33 publications

    2.1K citations

  2. Lam Research (United States)

    Fremont, United States

    11 h-index

    49 publications

    2.5K citations

  3. Hitachi (Japan)

    Tokyo, Japan

    10 h-index

    35 publications

    1K citations

  4. Centre National de la Recherche Scientifique

    Paris, France

    9 h-index

    24 publications

    897 citations

  5. Massachusetts Institute of Technology

    Cambridge, United States

    8 h-index

    27 publications

    3K citations

  6. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    7 h-index

    16 publications

    769 citations

  7. University of Houston

    Houston, United States

    6 h-index

    14 publications

    709 citations

  8. Seoul National University

    Seoul, South Korea

    6 h-index

    25 publications

    751 citations

1–8 of 220

Venues

  1. 21

    h-index

  2. 21

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 20 publications · 563 citations

    16

    h-index

  4. Journal of The Electrochemical Society

    JES · 16 publications · 821 citations

    14

    h-index

  5. Applied Physics Letters

    9 publications · 524 citations

    9

    h-index

1–5