Assessment of the Trench IGBT reliability: low temperature experimental characterization

Trends in power semiconductor devices

B. Jayant Baliga · IEEE Transactions on Electron Devices · 1996 · 446 citations

Engineering, Electrical Engineering, Microelectronics +13

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

B. Jayant Baliga, M.S. Adler, R.P. Love et al. · IEEE Transactions on Electron Devices · 1984 · 238 citations

Engineering, Electrical Engineering, Microelectronics +13

The COMFET—A new high conductance MOS-gated device

John P. Russell, Alvin M. Goodman, L.A. Goodman et al. · IEEE Electron Device Letters · 1983 · 201 citations

Engineering, Electrical Engineering, Microelectronics +12

A Systematic Hard- and Soft-Switching Performances Evaluation of 1200V Punchthrough IGBT Structures

Stéphane Azzopardi, Jean-Michel Vinassa, E. Woirgard et al. · IEEE Transactions on Power Electronics · 2004 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature variation effects in MCTs, IGBTs, and BMFETs

C.V. Godbold, J.L. Hudgins, C. Braun et al. · 2002 · 22 citations

Engineering, Electrical Engineering, Microelectronics +15