Applied Physics Letters · 1987 · 37 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor MaterialsBattery MaterialsCarrier TransportDopingSemiconductor Crystal GrowthSemiconductor Device MaterialsWide Band Gap SemiconductorsConcentrationDoping EffectsElectrical PropertiesElectrical Properties AnalysisHall EffectHall Effect MeasurementsMolecular Beam EpitaxyP-type Doping
p-type doping of HgCdTe(100) layers with lithium during growth by molecular beam epitaxy is reported. Hall measurements have been performed on these layers between 300 and 30 K. The Li concentration is found to increase with the Li cell temperature. Li-doped HgCdTe layers are estimated to have very shallow acceptor levels. Acceptor concentrations as high as 8×1018 cm−3 have been achieved. At low doping levels, due to residual donors, layers show compensation. Incorporation coefficient of Li close to 1 and almost 100% electrical efficiency for Li in molecular beam epitaxy HgCdTe layers were observed. However, Li is found to diffuse rapidly in HgCdTe layers grown by molecular beam epitaxy.
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Band structure of indium antimonide
E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations
Indium doping of HgCdTe layers during growth by molecular beam epitaxy
M. Boukerche, J. Reno, I. K. Sou et al. · Applied Physics Letters · 1986 · 33 citations