P. Capper - Concepedia

Author

P. Capper

Philips (United Kingdom)

Also Known As

Capper, Peter, Dr. Peter Capper, P Capper, P L CAPPER, P. Capper, P. LEONARD CAPPER, Peter Capper, Safa, Kasap

152

Publications

4.8K

Citations

H-Index

Concepts

All Affiliations

Philips (United Kingdom)CSL (United Kingdom)Philips (Finland)BAE Systems (United Kingdom)University of Hull

About

P. Capper is an author at Philips (United Kingdom) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	46	1.5K
2	Applied Physics	21	33	1K
3	Natural Sciences	9	9	307
4	Medicine	2	2	74
5	Biomolecular Engineering	1	1	60

P. Capper

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Effects of annealing on the electrical properties of Cd<i>x</i>Hg1−<i>x</i>Te C. L. Jones, M.J.T. Quelch, P. Capper, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringEngineering	1982	103
The effects of heat treatment on dislocation-free oxygen-containing silicon crystals P. Capper, Aled Jones, E. J. Wallhouse, Journal of Applied Physics Materials ScienceSemiconductorsBasic Silicon-oxygen RelationshipElectronic DevicesEngineering	1977	82
The behaviour of selected impurities in CdxHg1−xTe P. Capper Journal of Crystal Growth Ii-vi SemiconductorPhysicochemical AnalysisIntrinsic ImpurityChemistryCrystallography	1982	75
Application of the accelerated crucible rotation technique to the Bridgman growth of CdxHg1− xTe: Simulations and crystal growth P. Capper, J Gosney, C. L. Jones Journal of Crystal Growth X-ray CrystallographyMaterials ScienceCrystal StructureEngineeringNatural Sciences	1984	74
The effects of growth speed on the compositional variations in crystals of cadmium mercury telluride B.E. Bartlett, P. Capper, J.E. Harris, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyGrowth Speed	1979	64
Minority carrier lifetime in doped and undoped p-type Cd<sub>x</sub>Hg<sub>1-x</sub>Te D. E. Lacklison, P. Capper Semiconductor Science and Technology SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	1987	60
Substrate orientation effects in CdxHg1−xTe grown by MOVPE P. Capper, C. D. Maxey, P.A.C. Whiffin, Journal of Crystal Growth Substrate Orientation EffectsEngineeringCrystal Growth TechnologySurface ScienceBiomolecular Engineering	1989	60
The role of accelerated crucible rotation in the growth of Hg1−xCdxTe and CdTe/CdZnTe P. Capper Progress in Crystal Growth and Characterization of Materials Cell DivisionMolecular BiologyMedicineCell BiologyCrystallography	1994	54
Minority carrier lifetime in <i>n</i>-type Bridgman grown Hg1−<i>x</i>Cd<i>x</i>Te Ronald G. Pratt, J. Hewett, P. Capper, Journal of Applied Physics SemiconductorsIi-vi SemiconductorElectronic DevicesEngineeringPhysics	1983	53
Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique P. Capper, J.E. Harris, E. O’Keefe, Materials Science and Engineering B Natural SciencesMolecular BiologyBridgman GrowthChemistryCrucible Rotation Technique	1993	51

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