Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg1−<i>x</i>Cd<i>x</i>Te and CdTe

S. Sivananthan, Xiangfeng Chu, J. Reno, +1

Journal of Applied Physics

Materials ScienceIi-vi SemiconductorCondensation CoefficientCondensation CoefficientsEngineering +13

Molecular beam epitaxial growth of high quality HgTe and Hg1−<i>x</i>Cd<i>x</i>Te onto GaAs(001) substrates

J. P. Faurie, S. Sivananthan, M. Boukerche, +1

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringHg1−xcdxte EpilayersHg1−xcdxte Layers +13

HgTe/CdTe superlattices grown by molecular beam epitaxy

J. P. Faurie, M. Boukerche, S. Sivananthan, +2

Superlattices and Microstructures

Materials ScienceIi-vi SemiconductorEngineeringNanotechnologyHgte/cdte Superlattices +4

HgTe-CdTe superlattices: Experimental and theoretical curves of band gap versus HgTe layer thickness

J. Reno, I. K. Sou, J. P. Faurie, +3

Applied Physics Letters

Materials ScienceIi-vi SemiconductorTheoretical CurvesEngineeringPhysics +12

Indium doping of HgCdTe layers during growth by molecular beam epitaxy

M. Boukerche, J. Reno, I. K. Sou, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringEpitaxial GrowthEngineering +10

Hg incorporation in CdTe during the growth of HgTe-CdTe superlattices by molecular beam epitaxy

J. Reno, R. Sporken, Y. J. Kim, +2

Applied Physics Letters

Materials ScienceMercury FluxIi-vi SemiconductorEngineeringHg Incorporation +13

Far-infrared study of alloying in the HgTe-CdTe superlattice

Sidney Perkowitz, D. Rajavel, I. K. Sou, +7

Applied Physics Letters

Optical MaterialsEngineeringSpectroscopic PropertyIi-vi SemiconductorOptical Properties +15

II–VI semiconductor compounds: New superlattice systems for the future?

J. P. Faurie, J. Reno, M. Boukerche

Journal of Crystal Growth

SemiconductorsIi-vi SemiconductorEngineeringApplied PhysicsCondensed Matter Physics +3

Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth

M. Boukerche, P. S. Wijewarnasuriya, J. Reno, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceMaterials EngineeringElectrical EngineeringSitu DopingEngineering +12

(100) versus (111)<i>B</i> crystallographic orientation of Hg1−<i>x</i>Cd<i>x</i>Te grown by molecular-beam epitaxy

J. M. Arias, Sungchul Shin, J. T. Cheung, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceCrystal StructureIi-vi SemiconductorMolecular-beam EpitaxyEngineering +10