J. Reno

Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg1−<i>x</i>Cd<i>x</i>Te and CdTe

S. Sivananthan, Xiangfeng Chu, J. Reno et al. · Journal of Applied Physics · 1986 · 85 citations

Materials Science, Ii-vi Semiconductor, Condensation Coefficient +15

Molecular beam epitaxial growth of high quality HgTe and Hg1−<i>x</i>Cd<i>x</i>Te onto GaAs(001) substrates

J. P. Faurie, S. Sivananthan, M. Boukerche et al. · Applied Physics Letters · 1984 · 42 citations

Semiconductors, Materials Science, Electrical Engineering +15

HgTe/CdTe superlattices grown by molecular beam epitaxy

J. P. Faurie, M. Boukerche, S. Sivananthan et al. · Superlattices and Microstructures · 1985 · 41 citations

Materials Science, Ii-vi Semiconductor, Engineering +6

HgTe-CdTe superlattices: Experimental and theoretical curves of band gap versus HgTe layer thickness

J. Reno, I. K. Sou, J. P. Faurie et al. · Applied Physics Letters · 1986 · 35 citations

Materials Science, Ii-vi Semiconductor, Theoretical Curves +14

Indium doping of HgCdTe layers during growth by molecular beam epitaxy

M. Boukerche, J. Reno, I. K. Sou et al. · Applied Physics Letters · 1986 · 33 citations

Materials Science, Materials Engineering, Electrical Engineering +12