Applied Physics Letters · 1990 · 27 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation PhysicsSemiconductor DevicesDopingIntegrated Circuit DesignIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsSilicon MaterialsAmorphizationChannelingDisordered SemiconductorsImplantation-induced Defect FormationRadiation-induced AmorphizationRutherford Backscattering SpectrometryRutherford ScatteringSecondary Ion Mass Spectrometry
We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneling of BF+2 implantation or the lattice disorder of preimplanted silicon using secondary-ion mass spectroscopy and grazing exit Rutherford backscattering spectroscopy. The optimum doses are about 25% those for full amorphization, i.e., preamorphization. The channeling tail is eliminated by disordered layers containing about 60% silicon atoms on irregular sites.
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