Silicon dioxide deposition at 100 °C using vacuum ultraviolet light

Abstract

A new photochemical reaction for low-temperature deposition of silicon dioxide has been developed. In this process silane is reacted with nitrogen dioxide in the presence of vacuum ultraviolet radiation. The electrical and mechanical properties of films grown at 100 °C are reported. Capacitance voltage measurements on metal-oxide-semiconductor structures on silicon indicate an interface state density <5×1011/cm2. Several possible reaction mechanisms are discussed, and evidence is presented indicating surface photochemistry may be important.