Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001)

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

John E. Ayers · Journal of Crystal Growth · 1994 · 471 citations

Materials Science, Dislocation Densities, Engineering +11

W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

P.M. Smith, Shikuan Liu, Ming-Yih Kao et al. · IEEE Microwave and Guided Wave Letters · 1995 · 177 citations

Ghz F/sub Max/, Wide-bandgap Semiconductor, Engineering +16

Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Masami Tachikawa, Masafumi Yamaguchi · Applied Physics Letters · 1990 · 97 citations

Engineering, Semiconductor Device, Semiconductors +16

Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxy

P. Sheldon, K. M. Jones, M. M. Al‐Jassim et al. · Journal of Applied Physics · 1988 · 80 citations

Semiconductors, Materials Science, Epitaxial Inas/gaas +15

Design of InGaAs linear graded buffer structures

A. Sacedón, F. González-Sanz, E. Calleja et al. · Applied Physics Letters · 1995 · 77 citations

Optical Materials, Engineering, Structural Mechanics +18