Applied Physics Letters · 2011 · 15 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceAtomic Layer DepositionIii-v SemiconductorsSemiconductor SurfacesSurface PassivationSurface PhysicsX-ray Photoelectron SpectroscopyAtomic Layer Deposition PassivationChemical ModificationChemical Surface ModificationGallium OxideInterface DensityPassivationPassivation LayersPassivation Of Oxides
Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the “clean-up” effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.
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GaAs interfacial self-cleaning by atomic layer deposition
Christopher L. Hinkle, Arif Sonnet, Eric M. Vogel et al. · Applied Physics Letters · 2008 · 382 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 171 citations