Growth and strain characterization of high quality GaN crystal by HVPE

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Yuichi Oshima, Takeshi Eri, Masatomo Shibata et al. · Japanese Journal of Applied Physics · 2003 · 285 citations

Engineering, Materials Engineering, Materials Science +17

Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1998 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +17