Concepedia

Edge emission of AlxGa1−xN

Mohammad Rezaul Huque Khan, Yasuo Koide, H. Itoh, Nobuhiko Sawaki, Isamu Akasaki

Solid State Communications · 1986 · 73 citations · 12 references

DOI

Concepts

References

12

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

, , +17

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

, , +14

Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy

S. Yoshida, S. Misawa, S. Gonda · Journal of Applied Physics · 1982 · 272 citations

, , +16

Localized Excitons in CdS<sub>1−<i>x</i></sub>Se<sub><i>x</i></sub> Solid Solutions

S. Permogorov, A. N. Reznitskiǐ, S. Yu. Verbin et al. · physica status solidi (b) · 1982 · 152 citations

, , +16

Electron mobility in Al<i>x</i>Ga1−<i>x</i>As

G. B. Stringfellow · Journal of Applied Physics · 1979 · 124 citations

, , +12