Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy

Critical layer thickness for self-assembled InAs islands on GaAs

D. Leonard, K. Pond, P. M. Petroff · Physical review. B, Condensed matter · 1994 · 958 citations

Materials Science, Atomic Force Microscopy, Critical Thickness +13

Effect of strain on surface morphology in highly strained InGaAs films

C. W. Snyder, B. G. Orr, David A. Kessler et al. · Physical Review Letters · 1991 · 497 citations

Engineering, Crystal Growth Technology, Mechanical Engineering +17

Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Kota Tachibana, Takao Someya, Yasuhiko Arakawa · Applied Physics Letters · 1999 · 200 citations

Engineering, Colloidal Nanocrystals, Semiconductor Nanostructures +16

Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1999 · 152 citations

Wide-bandgap Semiconductor, Engineering, Laser Science +16

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hideki Hirayama, Satoru Tanaka, P. Ramvall et al. · Applied Physics Letters · 1998 · 134 citations · Full text

Engineering, Optoelectronic Devices, Luminescence Property +19