Barbara Kühn

Determination of small-signal parameters of GaN-based HEMTs

E. Chigaeva, W. Walthes, Dirk Wiegner et al. · 2002 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, Andreas Rosenauer et al. · Journal of Crystal Growth · 2003 · 66 citations

Engineering, Materials Engineering, Materials Science +14

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry

M. Schubert, A. Kasic, Tom Tiwald et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 50 citations · Full text

Natural Sciences, Materials Science, Physics +17

Thermoelectric Properties of CuIn1—xGaxTe2 Single Crystals

Barbara Kühn, W. Kaefer, K. Fess et al. · physica status solidi (a) · 1997 · 48 citations

Natural Sciences, Materials Science, Physics +17

Short-channel effects in AlGAN/GaN HEMTs

O. Breitschädel, L. Kley, H. Gräbeldinger et al. · Materials Science and Engineering B · 2001 · 39 citations

Engineering, Electrical Engineering, Materials Science +13