2002 · 67 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEquivalent Circuit AnalysisEquivalent Circuit ModelingGallium NitrideGallium Nitride (Gan) MaterialsSmall-signal Equivalent Circuit ModelsSmall-signal Equivalent CircuitsSmall-signal GainSmall-signal Modeling
The small-signal equivalent circuit of AlGaN/GaN HEMT is discussed It is shown that an extremely high gate voltage has to be applied to correctly determine series resistances. Effects appearing at high forward gate voltages are discussed. Good agreement between measured and simulated data has been achieved.
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Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1997 · 58 citations