O. Breitschädel

Determination of small-signal parameters of GaN-based HEMTs

E. Chigaeva, W. Walthes, Dirk Wiegner et al. · 2002 · 67 citations

Gan-based Hemts, Wide-bandgap Semiconductor, Electrical Engineering +12

Short-channel effects in AlGAN/GaN HEMTs

O. Breitschädel, L. Kley, H. Gräbeldinger et al. · Materials Science and Engineering B · 2001 · 39 citations

Electrical Engineering, Engineering, Applied Physics +4

Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas

J. T. Hsieh, Jung Min Hwang, H. L. Hwang et al. · Applied Surface Science · 2001 · 15 citations

Physics, Cathodoluminescence Spectroscopy, Applied Physics +7

Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process

O. Breitschädel, Bertram Kuhn, F. Scholz et al. · Journal of Electronic Materials · 1999 · 12 citations

Electrical Engineering, Engineering, Nanoelectronics +7