Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas - Concepedia

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Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas

15

Citations

12

References

2001

Year

J. T. Hsieh, Jung Min Hwang, H. L. Hwang, O. Breitschädel, H. Schweizer

Applied Surface Science

PhysicsCathodoluminescence SpectroscopyApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideCategoryiii-v SemiconductorPlasma EtchingO2/ar PlasmasDefect Depth

References

	Year	Citations

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