V. Pérez‐Solórzano

Near-red emission from site-controlled pyramidal InGaN quantum dots

V. Pérez‐Solórzano, A. Gröning, Michael Jetter et al. · Applied Physics Letters · 2005 · 46 citations

Materials Science, Photoluminescence, Ingan Nanostructures +14

Influence of composition on the wear properties of boron carbonitride (BCN) coatings deposited by high power impulse magnetron sputtering

T. Hirte, R. Feuerfeil, V. Pérez‐Solórzano et al. · Surface and Coatings Technology · 2015 · 19 citations

Materials Science, Materials Engineering, Boron Nitride +7

Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy

Yasuyuki Kobayashi, V. Pérez‐Solórzano, J. Off et al. · Journal of Crystal Growth · 2002 · 16 citations

Materials Science, Semiconductor Technology, Wide-bandgap Semiconductor +4

Selective growth of GaInN quantum dot structures

Michael Jetter, V. Pérez‐Solórzano, A. Groening et al. · Journal of Crystal Growth · 2004 · 15 citations

Engineering, Quantum Computing, Physics +7

Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE

V. Pérez‐Solórzano, A. Groening, R. Haerle et al. · Journal of Crystal Growth · 2004 · 14 citations

Materials Science, Aluminium Nitride, Ii-vi Semiconductor +8