Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell et al. · Japanese Journal of Applied Physics · 2007 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes

Kuniyoshi Okamoto, Hiroaki Ohta, Shigefusa F. Chichibu et al. · Japanese Journal of Applied Physics · 2007 · 147 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

A. Bourret, A. Barski, Jean‐Luc Rouvière et al. · Journal of Applied Physics · 1998 · 107 citations

Natural Sciences, Materials Engineering, Materials Science +17

Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy

B. A. Haskell, Arpan Chakraborty, Feng Wu et al. · Journal of Electronic Materials · 2005 · 98 citations

Engineering, Materials Engineering, Materials Science +14

M -plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy

R. Armitage, Hideki Hirayama · Applied Physics Letters · 2008 · 84 citations

Natural Sciences, Materials Engineering, Materials Science +17