Publication | Closed Access
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
21
Citations
29
References
2012
Year
ReliabilityPower Mosfets—methodologyElectrical EngineeringReliability EngineeringEngineeringFailure Rate CalculationsHardware ReliabilityRadiation Hardness AssuranceDestructive EventsBias Temperature InstabilityComputer EngineeringSingle Event EffectsEngineering Failure AnalysisCircuit ReliabilityDevice ReliabilityMicroelectronicsStatistical AnalysisPhysic Of Failure
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
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