Concepedia

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

V. Ferlet-Cavrois, C. Binois, A. M. J. F. Carvalho, N. Ikeda, Masasi Inoue, B. Eisener, Stefan Gamerith, G. Chaumont, Francesco Pintacuda, Arto Javanainen,

IEEE Transactions on Nuclear Science · 2012 · 21 citations · 30 references

DOI

Concepts

Abstract

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

References

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