A. M. J. F. Carvalho

Author

Also Known As

A. Carvalho, A. M. J. F. Carvalho, A.M.J.F. Carvalho, Aminata Carvalho, Aminata M. J. F. Carvalho, Aminata M.J.F. Carvalho, Carvalho, A. M. J. F., Carvalho, A.M.J.F.

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All Affiliations

Université de Montpellier Centre National de la Recherche Scientifique Laboratoire Excell Centre National d'Études Spatiales Centre de Recherche en Sciences et Technologies de l'Information et de la Communication

About

A. M. J. F. Carvalho is an author at Université de Montpellier specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	82
2	Applied Physics	4	4	61
3	Materials Science	3	3	49
4	Electrical Engineering	2	2	33
5	Computer Engineering	1	1	21

A. M. J. F. Carvalho

Publications

Citations

H-Index

Page 1

	Year	Citations
Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation A. M. J. F. Carvalho, M. Marinoni, Antoine Touboul, Applied Physics Letters EngineeringSilicon OxideVacuum DeviceSilicon On InsulatorThin Silicon	2007	29
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance V. Ferlet-Cavrois, C. Binois, A. M. J. F. Carvalho, IEEE Transactions on Nuclear Science ReliabilityPower Mosfets—methodologyElectrical EngineeringReliability EngineeringEngineering	2012	21
Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown M. Marinoni, Antoine Touboul, D. Zander, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringPhysicsPost Gate Stress	2009	12
SiO2–Si under swift heavy ion irradiation: A comparison between normal and grazing incidence features A. M. J. F. Carvalho, Antoine Touboul, M. Marinoni, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms	2008	10
Oxide thickness dependence of swift heavy ion-induced surface tracks formation in silicon dioxide on silicon structures at grazing incidence A. M. J. F. Carvalho, Antoine Touboul, M. Marinoni, Journal of Applied Physics EngineeringOxide Thickness DependenceVacuum DeviceSilicon On InsulatorIon Implantation	2007	10
High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects M. Marinoni, Antoine Touboul, D. Zander, IEEE Transactions on Nuclear Science Materials SciencePotential Physical UnderstandingLatent DefectsMos DevicesEngineering	2008	10

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