IEEE Electron Device Letters · 1983 · 19 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationSemiconductor ReliabilityShort-channel EffectsDv/dt ReductionExperimental Results InterpretationMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingPower Integrated CircuitsPower MosfetsThreshold Voltage Modeling
A model for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> breakdown in power MOSFET's is proposed. This model allows quantitative analysis of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> limitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.
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