Exoelectron emission spectroscopy of silicon nitride thin films

Abstract

Thermally stimulated exoelectron emission method is applied to amorphous silicon nitride (α-Si3N4) thin insulating films in the temperature region (300–550) K for energy spectroscopy of electronic states. The measured spectrum of electron (hole) traps is in good agreement with the known data obtained by other methods. The experimental data are interpreted on the basis of the model of electron-hole recombination in the two-center Auger process.