International Journal of Computer Applications · 2013 · 14 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThermal AnalysisDevice CharacterizationDevice ModelingSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAluminum Gallium NitrideAluminum NitrideElectron MobilityGallium NitrideHigh-electron-mobility TransistorsTemperature-dependent Electrical MeasurementsThermal ConductivityThermal Resistance
In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap energy, electron mobility, thermal conductivity and thermal resistance has been carried out. The electrical measurements have been done using network analyzer with infrared IR measurement technology. The results obtained on the basis of electrical measurements are compared with analytical and simulated results for the purpose of validation of our outcomes. The measured data shows a good agreement with analytical and simulated results, thereby validating our approach of AlGaN/GaN HEMT analysis.
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