Proceedings of the IEEE · 1968 · 15 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCurrent-voltage CharacteristicsDopingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor SurfacesSiliconSilicon Surface ScienceSubstrate BiasingThreshold VoltageThreshold Voltage Extraction
From an examination of the dependence of MOS transistor threshold voltage on substrate biasing conditions, experimental evidence is presented which indicates that at least part of the shift in threshold voltage which results from gold doping can be attributed to ionized gold acceptor states near the silicon surface.
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