Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics

On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors

J. Frenkel · Physical Review · 1938 · 2K citations

Natural Sciences, Materials Science, Physics +14

An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Lewis M. Terman · Solid-State Electronics · 1962 · 1.4K citations

Engineering, Materials Engineering, Materials Science +14

Band offsets of high K gate oxides on III-V semiconductors

John Robertson, B. Falabretti · Journal of Applied Physics · 2006 · 676 citations

Engineering, Electrical Engineering, Materials Science +17

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

P. D. Ye, Bingzheng Yang, K.K. Ng et al. · Applied Physics Letters · 2005 · 498 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Engineering, Electrical Engineering, Materials Science +17