IEEE Transactions on Electron Devices · 1979 · 30 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationOxide SemiconductorsP-n JunctionsSemiconductor Device MaterialsThin Film Electrical PropertiesBreakdown CharacteristicsBreakdown MechanismsBreakdown VoltageElectrical BreakdownElectrical Breakdown StrengthEquivalent Oxide ThicknessJunction BreakdownOxide Breakdown
A semitheoretical relationship has been developed between the surface breakdown of a planar junction protected by an overlaying field plate and its description in terms of resistivity and oxide thickness. This has been confirmed experimentally on p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n diodes in 45-Ω . cm material for a wide range of oxide thicknesses.
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