Applied Physics Letters · 2007 · 37 citations · 15 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCharge Carrier DensityElectrical PropertiesHeterostructure DevicesHeterostructuresSheet ResistanceSuperlatticesTransport In HeterostructuresTwo-dimensional Electron Gases
The authors report the electrical properties of two-dimensional electron gas (2DEG) in AlGaN∕GaN heterostructures using AlN∕GaN superlattices working as a quasi-AlGaN barrier layer. It is found that the electrical properties (2DEG mobility and sheet carrier density) in the quasi-AlGaN∕GaN heterostructure are greatly improved compared to those in the conventional alloy-AlGaN∕GaN one at the high Al composition more than 0.35. The improved 2DEG properties result in the reduction of the sheet resistance to as low as 172Ω∕□, which is extremely important for the high power and high frequency device application. Theoretical calculations clearly indicate that the quasi-AlGaN barrier plays an important role in enhancing the confinement of the carrier at the quasi-AlGaN∕GaN interface.
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Shortest wavelength semiconductor laser diode
Isamu Akasaki, S. Sota, Hiroshi Sakai et al. · Electronics Letters · 1996 · 462 citations