Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

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Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

On <i>p-</i>type doping in GaN—acceptor binding energies

Stefan Fischer, Christian Wetzel, E. E. Häller et al. · Applied Physics Letters · 1995 · 262 citations

Engineering, Materials Engineering, Materials Science +12

Scanning cathodoluminescence microscopy: A unique approach to atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

J. Christen, Marius Grundmann, D. Bimberg · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 162 citations

Natural Sciences, Materials Engineering, Materials Science +6

Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

Isamu Akasaki, Hiroshi Amano · Journal of The Electrochemical Society · 1994 · 132 citations

Engineering, Materials Engineering, Materials Science +17