Low voltage and low power embedded 2T-SONOS flash memories improved by using P-type devices and high-K materials

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

Engineering, Materials Engineering, Materials Science +17

NROM: A novel localized trapping, 2-bit nonvolatile memory cell

B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 547 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +12

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

Harald Bachhofer, H. Reisinger, E. Bertagnolli et al. · Journal of Applied Physics · 2001 · 142 citations

Engineering, Electrical Engineering, Microelectronics +16

Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

Sangmoo Choi, Myungjun Cho, Hyunsang Hwang et al. · Journal of Applied Physics · 2003 · 50 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Oxide–nitride–oxide layer optimisation for reliable embedded SONOS memories

R. van Schaijk, M. van Duuren, Wan Yuet Mei et al. · Microelectronic Engineering · 2004 · 10 citations

Engineering, Computer Engineering, Electrical Engineering +16