New physical model of multiplication-induced breakdown in MOSFETs

An accurate large-signal MOS transistor model for use in computer-aided design

G. Merckel, Jean-Pierre Borel, Nicolae Cupcea · IEEE Transactions on Electron Devices · 1972 · 145 citations

Engineering, Electrical Engineering, Circuit Theory +16

The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects

T. Skotnicki, G. Merckel, T. Pedron · IEEE Electron Device Letters · 1988 · 126 citations

Engineering, Electrical Engineering, Electronic Materials +16

Short-channel MOS transistors in the avalanche-multiplication regime

W. F. J. Müller, Lorenz Risch, A. Schütz · IEEE Transactions on Electron Devices · 1982 · 26 citations

Engineering, Electrical Engineering, Electronic Materials +14

A circuit simulation model for bipolar-induced breakdown in MOSFET

M. Pinto-Guedes, P.C. Chan · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1988 · 26 citations

Engineering, Electrical Engineering, Circuit Theory +16

Carrier multiplication in the pinchoff region of m.o.s. transistors

H. Martinot, P. Rossel · Electronics Letters · 1971 · 24 citations

Engineering, Electrical Engineering, Microelectronics +13