Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy

Structural changes during annealing of GaInAsN

Sarah Kurtz, Jennifer M. Webb, Lynn Gedvilas et al. · Applied Physics Letters · 2001 · 240 citations

Natural Sciences, Materials Science, Physics +13

Molecular-beam epitaxy (MBE) of In1−<i>x</i>Ga<i>x</i>As and GaSb1−<i>y</i>As<i>y</i>

Chin‐An Chang, R. Ludeke, L. L. Chang et al. · Applied Physics Letters · 1977 · 206 citations

Engineering, Materials Engineering, Materials Science +17

Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law

Wei Li, M. Pessa, J. Likonen · Applied Physics Letters · 2001 · 139 citations

Engineering, Materials Science, Physics +17

Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

Jean‐Christophe Harmand, G. Ungaro, L. Largeau et al. · Applied Physics Letters · 2000 · 112 citations

Engineering, Materials Engineering, Materials Science +15

GaAsSbN: a new low-bandgap material for GaAs substrates

G. Ungaro, G. Le Roux, R. Teissier et al. · Electronics Letters · 1999 · 96 citations

Engineering, Materials Engineering, Materials Science +17