Applied Physics Letters · 2001 · 240 citations · 8 references
Wide-bandgap SemiconductorOptical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsQuantum MaterialsMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorMaterials ScienceMaterials EngineeringPhysicsCrystalline DefectsOptoelectronic MaterialsCrystallographyMicrostructureFourier TransformStructural ChangesCondensed Matter PhysicsApplied PhysicsAlloy GainasnOptoelectronics
The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm−1 (Ga–N stretch) and two or three bands at ∼3100 cm−1 (N–H stretch). The change in the Ga–N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N–H stretch is also changed after annealing, implying a second, and unrelated, structural change.
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1-eV solar cells with GaInNAs active layer
Daniel J. Friedman, John F. Geisz, Sarah Kurtz et al. · Journal of Crystal Growth · 1998 · 416 citations
Photocurrent of 1eV GaInNAs lattice-matched to GaAs
John F. Geisz, Daniel J. Friedman, J. M. Olson et al. · Journal of Crystal Growth · 1998 · 291 citations