David Joslin

Structural changes during annealing of GaInAsN

Sarah Kurtz, Jennifer M. Webb, Lynn Gedvilas et al. · Applied Physics Letters · 2001 · 240 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells

N.H. Karam, Richard R. King, M. Haddad et al. · Solar Energy Materials and Solar Cells · 2001 · 95 citations

Electrical Engineering, Engineering, Compound Semiconductor +8

Development and characterization of high-efficiency Ga/sub 0.5/In/sub 0.5/P/GaAs/Ge dual- and triple-junction solar cells

N.H. Karam, Richard R. King, B.T. Cavicchi et al. · IEEE Transactions on Electron Devices · 1999 · 88 citations

Dj Solar Cells, Wide-bandgap Semiconductor, Electrical Engineering +11

Next-generation, high-efficiency III-V multijunction solar cells

Richard R. King, N.H. Karam, J. Ermer et al. · 2002 · 83 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Least-cost flaw repair: a plan refinement strategy for partial-order planning

David Joslin, Martha E. Pollack · 1994 · 50 citations