IEEE Photonics Technology Letters · 1992 · 36 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMetal-semiconductor ContactsOptical Properties Of SemiconductorsOptoelectronic DevicesPhotodetectorsSemiconductor Device MaterialsBreakdown VoltageHigh-voltage BreakdownIndium Tin Oxide Thin FilmsMetal-semiconductor-metal PhotodetectorsPhotodetectionPhotodetector BandwidthResponsivityTransit Time Effects
Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO MSMs is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au MSMs under normal operational bias conditions at lambda =850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO MSMs exhibited a linear optical response over a wider bias range than Ti/Au MSMs. Also, a higher breakdown voltage was measured for ITO MSMs. The bandwidths of ITO and Ti/Au MSMs fabricated on the same semiconductor layer with 1- mu m fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO MSMs is due to the longer transit time of the carriers generated beneath the ITO electrodes.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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105-GHz bandwidth metal-semiconductor-metal photodiode
Bart J. Van Zeghbroeck, W. Patrick, J.-M. Halbout et al. · IEEE Electron Device Letters · 1988 · 132 citations
A GaAs MESFET IC for optical multiprocessor networks
John D. Crow, C.J. Anderson, Stuart Bermon et al. · IEEE Transactions on Electron Devices · 1989 · 55 citations · Full text