105-GHz bandwidth metal-semiconductor-metal photodiode

Abstract

The authors report the fabrication and characterization of a metal-semiconductor-metal (MSM) Schottky-barrier photodiode with a measured impulse response shorter than 5 ps and a bandwidth of 105 GHz at a bias voltage of 0.5 V. It is shown that the experimental results are in good agreement with numeric calculations. Because of its high performance and process compatibility with GaAs FETs, this type of photodiode is very well suited for monolithic micro- and millimeter-wave optoelectronic circuits.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>