Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 33 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsElectrical PropertiesInterface TrapsInterfacial Film PropertiesInterfacial PropertiesNitride Thin FilmsOxide DielectricsSiliconSilicon Nitride
This article addresses the electrical properties of interfaces between n- and p-type Si and remote plasma-deposited Si3N4, which are of interest in aggressively scaled advanced CMOSFETs. The nitride films of this article display excellent electrical properties when implemented into stacked oxide/nitride dielectrics in both NMOSFETs and PMOSFETs with oxide, or nitrided oxide interfaces. The same nitride layers deposited directly onto clean Si surfaces display degraded electrical properties with respect to devices with oxide, or nitrided oxide interfaces. PMOS interfaces are significantly more degraded than n-type metal–oxide semiconductors interfaces indicating a relatively high density of donor-like interface traps that inhibit channel formation.
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