Development of MBE II–VI Epilayers on GaAs(211)B - Concepedia

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Development of MBE II–VI Epilayers on GaAs(211)B

21

Citations

14

References

2012

Year

R. N. Jacobs, C. Nozaki, L. A. Almeida, M. Jaime-Vasquez, C. M. Lennon, J. K. Markunas, D. K. Benson, Peter J. Smith, Wenfeng Zhao, David J. Smith,

Journal of Electronic Materials

SemiconductorsMbe Ii–vi EpilayersIi-vi SemiconductorEngineeringApplied PhysicsMolecular Beam EpitaxyCompound Semiconductor

References

	Year	Citations

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