Development of MBE II–VI Epilayers on GaAs(211)B

Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors

S. M. Johnson, David R. Rhiger, J. P. Rosbeck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 205 citations

Natural Sciences, Materials Science, Physics +17

Observation of dislocations in cadmium telluride by cathodoluminescence microscopy

Kiyokazu Nakagawa, K. Maeda, Shoji Takeuchi · Applied Physics Letters · 1979 · 189 citations

Engineering, Materials Engineering, Materials Science +15

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

R. Sporken, S. Sivananthan, K. K. Mahavadi et al. · Applied Physics Letters · 1989 · 107 citations

Engineering, Materials Engineering, Materials Science +17

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Nibir K. Dhar, P. R. Boyd, M. Martinka et al. · Journal of Electronic Materials · 2000 · 55 citations

Engineering, Materials Engineering, Materials Science +14

Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

J. P. Zanatta, Giacomo Badano, P. Ballet et al. · Journal of Electronic Materials · 2006 · 49 citations

Engineering, Materials Engineering, Materials Science +14