Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization

Metal-semiconductor contacts

E. H. Rhoderick · IEE Proceedings I Solid State and Electron Devices · 1982 · 1.7K citations

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CF 2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization

G. Cunge, Jean‐Paul Booth · Journal of Applied Physics · 1999 · 187 citations

Natural Sciences, Chemistry, Materials Science +16

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao, L. S. Yu, S. S. Lau et al. · Journal of Applied Physics · 2000 · 151 citations

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High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Farid Khan, I. Adesida · Applied Physics Letters · 1999 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +15

Simulation of SiC High Power Devices

Mietek Bakowski, Ulf Gustafsson, U. Lindefelt · physica status solidi (a) · 1997 · 132 citations

Engineering, Electrical Engineering, Materials Science +17