Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations

Engineering, Electrical Engineering, Materials Science +17

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 530 citations

Natural Sciences, Materials Engineering, Materials Science +17

Spatial distribution of the luminescence in GaN thin films

F. A. Ponce, D. P. Bour, Werner Götz et al. · Applied Physics Letters · 1996 · 361 citations

Natural Sciences, Materials Engineering, Materials Science +17

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Bernard Gil, O. Briot, Roger-Louis Aulombard · Physical review. B, Condensed matter · 1995 · 311 citations

Natural Sciences, Materials Science, Physics +17

The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

Jung Han, T.B. Ng, R. M. Biefeld et al. · Applied Physics Letters · 1997 · 168 citations

Natural Sciences, Materials Engineering, Materials Science +17