Sandrine Juillaguet

Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions

Marcin Zieliński, Saliou Ndiaye, Thierry Chassagne et al. · physica status solidi (a) · 2007 · 59 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

R. Al Asmar, Sandrine Juillaguet, Michel Ramonda et al. · Journal of Crystal Growth · 2005 · 56 citations

Materials Science, Engineering, High Quality +6

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

Marcin Zieliński, Marc Portail, Thierry Chassagne et al. · Journal of Crystal Growth · 2008 · 49 citations

Materials Engineering, Materials Science, Engineering +7

Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

J. Camassel, J.P. Laurenti, Sandrine Juillaguet et al. · Journal of Crystal Growth · 1991 · 43 citations

Ii-vi Semiconductor, Finite Interface Effects, Growth Interruption Sequence +7

Prospects for 3C-SiC bulk crystal growth

Didier Chaussende, F. Mercier, Alexandre Boulle et al. · Journal of Crystal Growth · 2007 · 42 citations · Full text

Materials Science, Materials Engineering, Engineering +2