Sandrine Juillaguet - Concepedia

Author

Sandrine Juillaguet

Centre National de la Recherche Scientifique ORCID

Also Known As

Camassel, J., Jouan, Sylvie, Juillaguet S, Juillaguet, S., Juillaguet, Sandrine, Rine Juillaguet, S Juillaguet, S. JUILLAGUET, S. Juillaguet, Sandrine Juillaguet

212

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université de Montpellier Laboratoire Charles Coulomb Université Claude Bernard Lyon 1 Laboratoire des Multimatériaux et Interfaces

About

Sandrine Juillaguet is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	37	844
2	Applied Physics	18	37	844
3	Electrical Engineering	9	9	175
4	Chemical Engineering	3	3	69
5	Chemistry	2	2	44

Sandrine Juillaguet

Publications

900

Citations

H-Index

Page 1

	Year	Citations
Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions Marcin Zieliński, Saliou Ndiaye, Thierry Chassagne, physica status solidi (a) Optical MaterialsEngineeringOptoelectronic DevicesThin Film Process TechnologyCreep Effect	2007	59
Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique R. Al Asmar, Sandrine Juillaguet, Michel Ramonda, Journal of Crystal Growth Materials ScienceEngineeringHigh QualityOxide ElectronicsApplied Physics	2005	56
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor Marcin Zieliński, Marc Portail, Thierry Chassagne, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied Physics3C-sic Thin Films	2008	49
Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence J. Camassel, J.P. Laurenti, Sandrine Juillaguet, Journal of Crystal Growth Ii-vi SemiconductorFinite Interface EffectsGrowth Interruption SequenceEngineeringPhysics	1991	43
Prospects for 3C-SiC bulk crystal growth Didier Chaussende, F. Mercier, Alexandre Boulle, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringApplied PhysicsCarbide	2007	42
Application of LTPL Investigation Methods to CVD‐Grown SiC J. Camassel, Sandrine Juillaguet, Marcin Zieliński, Chemical Vapor Deposition Optical MaterialsEngineeringSemiconductor DeviceSemiconductorsOptical Properties	2006	38
Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism Maher Soueidan, Gabriel Ferro, B. Nsouli, Crystal Growth & Design Materials EngineeringMaterials ScienceEngineeringNanoelectronicsGe−si Melt	2006	32
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls" Thierry Chassagne, A. Leycuras, Carole Balloud, Materials science forum Resistively-heated Lp-cvd ReactorEngineeringApplied PhysicsHeat TransferChemical Vapor Deposition	2004	31
Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment I. Halidou, Z. Benzarti, T. Boufaden, Materials Science and Engineering B Materials EngineeringWide-bandgap SemiconductorChemical EngineeringEngineeringMovpe Grown Gan	2004	29
Effect of SiN treatment on GaN epilayer quality Z. Benzarti, I. Halidou, T. Boufaden, physica status solidi (a) Materials ScienceSemiconductorsElectrical EngineeringHigh-temperature Gan FilmsEngineering	2004	29

Page 1