Didier Chaussende

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

A. Debelle, L. Thomé, D. Dompoint et al. · Journal of Physics D Applied Physics · 2010 · 101 citations · Full text

Engineering, Low Dose, Radiation Materials Science +17

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

A. Debelle, Marie Backman, L. Thomé et al. · Physical Review B · 2012 · 90 citations · Full text

Engineering, Crystal Growth Technology, Electronic Interactions +16

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Camilla Coletti, Stiven Forti, Alessandro Principi et al. · Physical Review B · 2013 · 83 citations · Full text

Engineering, Angle-resolved Photoemission Study, Graphene Nanomeshes +18

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Camilla Coletti, K. V. Emtsev, Alexei Zakharov et al. · Applied Physics Letters · 2011 · 64 citations · Full text

Materials Science, Graphene Nanomeshes, Graphene-based Nano-antennas +13

Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth

F. Mercier, Didier Chaussende, M. Pons · Journal of Crystal Growth · 2009 · 62 citations

Materials Engineering, Heat Transfer Process, Engineering +7