Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence - Concepedia

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Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

43

Citations

8

References

1991

Year

J. Camassel, J.P. Laurenti, Sandrine Juillaguet, F. Reinhardt, K. Wolter, H. Kurz, Detlev Grützmacher

Journal of Crystal Growth

Ii-vi SemiconductorFinite Interface EffectsGrowth Interruption SequenceEngineeringPhysicsApplied PhysicsQuantum MaterialsMolecular Beam EpitaxyOptoelectronicsCompound Semiconductor

References

	Year	Citations

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